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RoHS
Compliant
Support
Technical team support
Specifications
- Threshold Voltage
- 5V
- Rds On Max Id Vgs
- 26m Ω @ 70A, 10V
- Maximum Operating Temperature C
- 150
- Element Configuration
- Single
- Package Height
- 21.34(Max)
- Input Capacitance Ciss Max Vds
- 14800pF @ 25V
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Maximum Power Dissipation Mw
- 300000
- Number Of Elements Per Chip
- 1
- Ambalaj
- Tube
- Typical Input Capacitance Vds Pf
- 14800@25V
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 300W Tc
- Configuration
- Single
- Pcb Changed
- 3
- Isolation Voltage
- 2.5kV
- Maximum Drain Source Resistance Mohm
- 28@10V
- Typical Gate Charge Vgs Nc
- 185@10V
- Channel Mode
- Enhancement
- Automotive
- No
- Drain Currentmax Abs Id
- 70A
- Material
- Si
- Typical Turnoff Delay Time Ns
- 100
- Rise Time
- 30ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation
- 300W
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Typical Gate Charge10v Nc
- 185
- Ppap
- No
- Radyasyon Dayanımı
- No
- Supplier Package
- ISOPLUS 247
- Additional Feature
- AVALANCHE RATED, UL RECOGNIZED
- Channel Type
- N
- Process Technology
- HiperFET
- Vgsth Max Id
- 5V @ 8mA
- Tab
- Tab
- Kurşunsuz
- Lead Free
- Eu Rohs
- Compliant with Exemption
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