IXFP60N25X3

Specifications

Maximum Operating Temperature C

150

Package Height

9.15(Max)

Input Capacitance Ciss Max Vds

3610pF @ 25V

Rds On Max Id Vgs

23m Ω @ 30A, 10V

Id Continuous Drain Current

60 A

Maximum Power Dissipation Mw

320000

Number Of Elements Per Chip

1

Ambalaj

Tube

Typical Input Capacitance Vds Pf

3610@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Power Dissipation Max

320W Tc

Maximum Drain Source Resistance Mohm

23@10V

Typical Gate Charge Vgs Nc

50@10V

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Typical Turnoff Delay Time Ns

62

Qg Gate Charge

50 nC

Çalışma Sıcaklığı

-55°C~150°C TJ

Automotive

No

Vgs Max

±20V

Typical Gate Charge10v Nc

50

Ppap

No

Vgs Th Gatesource Threshold Voltage

2.5 V

Rds On Drainsource Resistance

19 mOhms

Channel Type

N

Vgsth Max Id

4.5V @ 1.5mA

Supplier Package

TO-220AB

Number Of Channels

1 Channel

Typical Rise Time Ns

10

Package Length

10.66(Max)

Tab

Tab

Eu Rohs

Compliant

Vds Drainsource Breakdown Voltage

250 V

Seri

HiPerFET™

Package Width

4.83(Max)

Pd Power Dissipation

320 W

Kılıf / Paket

TO-220-3

Fabrika Tedarik Süresi

19 Weeks

Maximum Drain Source Voltage V

250