IXFP22N65X2

Specifications

Power Dissipation Max

390W Tc

Configuration

Single

Pcb Changed

3

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

37@10V

Maximum Drain Source Resistance Mohm

145@10V

Rds On Max Id Vgs

160m Ω @ 11A, 10V

Input Capacitance Ciss Max Vds

2310pF @ 25V

Maximum Operating Temperature C

150

Package Height

9.15(Max)

Number Of Elements Per Chip

1

Ambalaj

Tube

Maximum Power Dissipation Mw

390000

Typical Input Capacitance Vds Pf

2190@25V

Supplier Package

TO-220AB

Vgsth Max Id

5.5V @ 1.5mA

Channel Type

N

Eu Rohs

Compliant

Tab

Tab

Package Length

10.66(Max)

Typical Rise Time Ns

37

Automotive

No

Çalışma Sıcaklığı

-55°C~150°C TJ

Typical Turnoff Delay Time Ns

42

Ppap

No

Typical Gate Charge10v Nc

37

Vgs Max

±30V

Drain To Source Voltage Vdss

650V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2015

Minimum Operating Temperature C

-55

Montaj

Through Hole

Maximum Continuous Drain Current A

22

Gate Charge Qg Max Vgs

38nC @ 10V

Fabrika Tedarik Süresi

19 Weeks

Kılıf / Paket

TO-220-3

Seri

HiPerFET™

Package Width

4.83(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Drain Source Voltage V

650