IXFP180N10T2

Specifications

Maximum Operating Temperature C

175

Package Height

9.15(Max)

Input Capacitance Ciss Max Vds

10500pF @ 25V

Rds On Max Id Vgs

6m Ω @ 50A, 10V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

480000

Typical Input Capacitance Vds Pf

10500@25V

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

480W Tc

Jesd30 Code

R-PSFM-T3

Maximum Drain Source Resistance Mohm

6@10V

Typical Gate Charge Vgs Nc

185@10V

Channel Mode

Enhancement

Configuration

SINGLE WITH BUILT-IN DIODE

Pcb Changed

3

Typical Turnoff Delay Time Ns

34

Çalışma Sıcaklığı

-55°C~175°C TJ

Automotive

No

Typical Gate Charge10v Nc

185

Vgs Max

±20V

Ppap

No

Ds Breakdown Voltagemin

100V

Channel Type

N

Vgsth Max Id

4V @ 250μA

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Supplier Package

TO-220AB

Additional Feature

AVALANCHE RATED

Package Length

10.66(Max)

Typical Rise Time Ns

37

Tab

Tab

Eu Rohs

Compliant

Package Width

4.83(Max)

Seri

GigaMOS™, HiPerFET™, TrenchT2™

Jedec95 Code

TO-220AB

Kılıf / Paket

TO-220-3

Fabrika Tedarik Süresi

26 Weeks