IXFP10N60P

Specifications

Additional Feature

AVALANCHE RATED

Supplier Package

TO-220AB

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

5.5V @ 1mA

Channel Type

N

Process Technology

HiperFET

Eu Rohs

Compliant

Tab

Tab

Kurşunsuz

Lead Free

Package Length

10.66(Max)

Typical Rise Time Ns

27

Automotive

No

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

27ns

Power Dissipation

200W

Typical Turnoff Delay Time Ns

65

Direnç

740MOhm

Pin Sayısı

3

Ppap

No

Typical Gate Charge10v Nc

32

Vgs Max

±30V

Akım Değeri

10A

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

200W Tc

Configuration

Single

Pcb Changed

3

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

740@10V

Typical Gate Charge Vgs Nc

32@10V

Threshold Voltage

5.5V

Rds On Max Id Vgs

740m Ω @ 5A, 10V

Input Capacitance Ciss Max Vds

1610pF @ 25V

Maximum Operating Temperature C

150

Element Configuration

Single

Package Height

9.15(Max)

Yükseklik

9.15mm

Maximum Power Dissipation Mw

200000

Number Of Elements Per Chip

1

Ambalaj

Tube