IXFN80N60P3

Specifications

Rds On Max Id Vgs

70m Ω @ 40A, 10V

Input Capacitance Ciss Max Vds

13100pF @ 25V

Element Configuration

Single

Maximum Operating Temperature C

150

Yükseklik

9.6mm

Package Height

9.6(Max)

Ambalaj

Tube

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

960000

Typical Input Capacitance Vds Pf

13100@25V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

960W Tc

Configuration

Single Dual Source

Pcb Changed

4

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

77@10V

Typical Gate Charge Vgs Nc

190@10V

Automotive

No

Çalışma Sıcaklığı

-55°C~150°C TJ

Standard Package Name

SOT

Power Dissipation

960W

Typical Turnoff Delay Time Ns

87

Pin Sayısı

4

Ppap

No

Radyasyon Dayanımı

No

Ds Breakdown Voltagemin

600V

Typical Gate Charge10v Nc

190

Vgs Max

±30V

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Supplier Package

SOT-227B

Vgsth Max Id

5V @ 8mA

Process Technology

HiperFET

Channel Type

N

Eu Rohs

Compliant with Exemption

Terminal Formu

UNSPECIFIED

Kurşunsuz

Lead Free

Typical Rise Time Ns

25

Package Length

38.23(Max)