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RoHS
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Technical team support
Specifications
- Vgs Max
- ±30V
- Pin Sayısı
- 4
- Direnç
- 55MOhm
- Power Dissipation
- 700W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 27ns
- Kurşunsuz
- Lead Free
- Terminal Formu
- UNSPECIFIED
- Qualification Status
- Not Qualified
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Vgsth Max Id
- 5V @ 8mA
- Additional Feature
- UL RECOGNIZED, AVALANCHE RATED
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Yükseklik
- 9.6mm
- Element Configuration
- Single
- Input Capacitance Ciss Max Vds
- 12700pF @ 25V
- Rds On Max Id Vgs
- 65m Ω @ 500mA, 10V
- Power Dissipation Max
- 700W Tc
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 80A
- Terminal Sayısı
- 4
- Current Continuous Drain Id25
- 66A Tc
- Case Connection
- ISOLATED
- Transistor Application
- SWITCHING
- Pin Sayısı
- 4
- Drive Voltage Max Rds On Min Rds On
- 10V
- Continuous Drain Current Id
- 66A
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 30V
- Terminal Pozisyonu
- UPPER
- Turn On Delay Time
- 25 ns
- Genişlik
- 25.07mm
- Pulsed Drain Currentmax Idm
- 200A
- Montaj Tipi
- Chassis Mount
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 500V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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