IXFN56N90P

Specifications

Pcb Changed

4

Channel Type

N

Eccn Us

EAR99

Number Of Elements

1

Fall Time Typ

38 ns

Rise Time

80ns

Terminal Sayısı

4

Automotive

No

Gate Charge Qg Max Vgs

375nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Height

9.6(Max)

Continuous Drain Current Id

56A

Category

Power MOSFET

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Package Length

38.23(Max)

Direnç

135MOhm

Fet Type

N-Channel

Power Dissipation

1kW

Operating Mode

ENHANCEMENT MODE

Supplier Package

SOT-227B

Maximum Operating Temperature C

150

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Standard Package Name

SOT

Maximum Gate Source Voltage V

±30

Rds On Max Id Vgs

135m Ω @ 28A, 10V

Current Continuous Drain Id25

56A Tc

Typical Rise Time Ns

80

Case Connection

ISOLATED

Channel Mode

Enhancement

Montaj Tipi

Chassis Mount

Configuration

Single Dual Source

Terminal Kaplaması

Nickel (Ni)

Seri

Polar™

Typical Gate Charge10v Nc

375

Number Of Elements Per Chip

1

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

900

Turn Off Delay Time

93 ns

Minimum Operating Temperature C

-55