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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Reach Svhc
- No SVHC
- Fall Time Typ
- 45 ns
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 330nC @ 10V
- Continuous Drain Current Id
- 55A
- Rise Time
- 60ns
- Terminal Sayısı
- 4
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Direnç
- 80mOhm
- Radyasyon Dayanımı
- No
- Fet Type
- N-Channel
- Power Dissipation
- 600W
- Operating Mode
- ENHANCEMENT MODE
- Additional Feature
- AVALANCHE RATED
- Current Continuous Drain Id25
- 55A Tc
- Rds On Max Id Vgs
- 90m Ω @ 27.5A, 10V
- Case Connection
- DRAIN
- Montaj Tipi
- Chassis Mount
- Seri
- HiPerFET™
- Gate To Source Voltage Vgs
- 20V
- Terminal Kaplaması
- Nickel (Ni)
- Turn Off Delay Time
- 120 ns
- Transistor Element Material
- SILICON
- Kılıf / Paket
- SOT-227-4, miniBLOC
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 9400pF @ 25V
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Weight
- 46g
- Ambalaj
- Tube
- Nominal Vgs
- 4.5 V
- Terminal Formu
- UNSPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Breakdown Voltage
- 500V
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PUFM-X4
- Terminal Pozisyonu
- UPPER
- Terminal
- Screw
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