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Specifications
- Akım Değeri
- 48A
- Current Continuous Drain Id25
- 48A Tc
- Rds On Max Id Vgs
- 100m Ω @ 500mA, 10V
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 520W
- Additional Feature
- AVALANCHE RATED
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Direnç
- 100mOhm
- Fet Type
- N-Channel
- Fall Time Typ
- 30 ns
- Number Of Elements
- 1
- Reach Svhc
- No SVHC
- Continuous Drain Current Id
- 48A
- Gate Charge Qg Max Vgs
- 270nC @ 10V
- Nem Hassasiyeti (MSL)
- Not Applicable
- Terminal Sayısı
- 4
- HTS Kodu
- 8541.29.00.95
- Rise Time
- 60ns
- Qualification Status
- Not Qualified
- ECCN Kodu
- EAR99
- Turn Off Delay Time
- 100 ns
- Transistor Element Material
- SILICON
- Kılıf / Paket
- SOT-227-4, miniBLOC
- Gate To Source Voltage Vgs
- 20V
- Seri
- HiPerFET™
- Terminal Kaplaması
- Nickel (Ni)
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Chassis Mount
- Voltage Rated Dc
- 500V
- Jesd30 Code
- R-PUFM-X4
- Terminal Pozisyonu
- UPPER
- Power Dissipation Max
- 520W Tc
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- UNSPECIFIED
- Nominal Vgs
- 4 V
- Drain To Source Breakdown Voltage
- 500V
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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