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C3 ChipZentronix
IXFN38N100P

IXYS

IXFN38N100P

Single MOSFETs Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Power Dissipation Max
1000W Tc
Typical Input Capacitance Vds Pf
24000@25V
Terminal Pozisyonu
UPPER
Ppap
No
Package Width
25.42(Max)
Maximum Continuous Drain Current A
38
Kurşunsuz
Lead Free
Ambalaj
Tube
RoHS Durumu
ROHS3 Compliant
Input Capacitance Ciss Max Vds
24000pF @ 25V
Maximum Drain Source Resistance Mohm
210@10V
Mounting
Screw
Transistor Application
SWITCHING
Drain To Source Breakdown Voltage
1kV
Terminal Formu
UNSPECIFIED
Çalışma Sıcaklığı
-55°C~150°C TJ
Yayın Yılı
2009
Montaj
Chassis Mount, Screw
Eu Rohs
Compliant with Exemption
Avalanche Energy Rating Eas
2000 mJ
Vgsth Max Id
6.5V @ 1mA
Typical Gate Charge Vgs Nc
350@10V
Fabrika Tedarik Süresi
20 Weeks
Pin Sayısı
4
Drain To Source Voltage Vdss
1000V
Maximum Power Dissipation Mw
1000000
Parça Durumu
Active
Hts
8541.29.00.95
Vgs Max
±30V
Pin Sayısı
4
Typical Turnon Delay Time Ns
74
Typical Fall Time Ns
40
Typical Turnoff Delay Time Ns
71
Additional Feature
AVALANCHE RATED, UL RECOGNIZED
Standard Package Name
SOT
Power Dissipation
1kW
Operating Mode
ENHANCEMENT MODE
Supplier Package
SOT-227B
Maximum Operating Temperature C
150
Rds On Max Id Vgs
210m Ω @ 19A, 10V

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