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Specifications
- Kılıf / Paket
- SOT-227-4, miniBLOC
- Maximum Drain Source Voltage V
- 70
- Transistor Element Material
- SILICON
- Process Technology
- HiperFET
- Minimum Operating Temperature C
- -55
- Turn Off Delay Time
- 200 ns
- Lead Shape
- Screw
- Montaj Tipi
- Chassis Mount
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Channel Mode
- Enhancement
- Case Connection
- ISOLATED
- Typical Rise Time Ns
- 95
- Svhc
- Yes
- Number Of Elements Per Chip
- 1
- Terminal Kaplaması
- Nickel (Ni)
- Typical Gate Charge10v Nc
- 490
- Gate To Source Voltage Vgs
- 20V
- Seri
- HiPerFET™
- Standard Package Name
- SOT
- Additional Feature
- AVALANCHE RATED
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 700W
- Maximum Operating Temperature C
- 150
- Supplier Package
- SOT-227B
- Rds On Max Id Vgs
- 4m Ω @ 100A, 10V
- Current Continuous Drain Id25
- 340A Tc
- Maximum Gate Source Voltage V
- ±20
- Terminal Sayısı
- 4
- Rise Time
- 95ns
- Package Height
- 9.6(Max)
- Continuous Drain Current Id
- 340A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 490nC @ 10V
- Automotive
- No
- Pcb Changed
- 4
- Eccn Us
- EAR99
- Number Of Elements
- 1
- Fall Time Typ
- 33 ns
- Channel Type
- N
- Package Length
- 38.23(Max)
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