IXFN26N120P

Specifications

Avalanche Energy Rating Eas

1500 mJ

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Montaj

Chassis Mount

Maximum Power Dissipation Mw

695000

Pin Sayısı

4

Drain To Source Voltage Vdss

1200V

Vgsth Max Id

6.5V @ 1mA

Typical Gate Charge Vgs Nc

255@10V

Fabrika Tedarik Süresi

30 Weeks

Parça Durumu

Active

Pulsed Drain Currentmax Idm

60A

Typical Turnoff Delay Time Ns

76

Typical Turnon Delay Time Ns

56

Typical Fall Time Ns

58

Vgs Max

±30V

Pin Sayısı

4

Ppap

No

Typical Input Capacitance Vds Pf

14000@25V

Terminal Pozisyonu

UPPER

Power Dissipation Max

695W Tc

Maximum Continuous Drain Current A

23

Package Width

25.42(Max)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Maximum Drain Source Resistance Mohm

500@10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

14000pF @ 25V

Ambalaj

Tube

Terminal Formu

UNSPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

1.2kV

Mounting

Screw

Transistor Application

SWITCHING

Turn Off Delay Time

76 ns

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

1200

Kılıf / Paket

SOT-227-4, miniBLOC