IXFN230N20T

Specifications

Terminal Sayısı

4

Continuous Drain Current Id

220A

Package Height

9.6(Max)

Automotive

No

Gate Charge Qg Max Vgs

378nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pcb Changed

4

Eccn Us

EAR99

Number Of Elements

1

Channel Type

N

Package Length

38.23(Max)

Fet Type

N-Channel

Category

Power MOSFET

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Standard Package Name

SOT

Additional Feature

UL RECOGNIZED, AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.09kW

Maximum Operating Temperature C

175

Supplier Package

SOT-227B

Rds On Max Id Vgs

7.5m Ω @ 60A, 10V

Current Continuous Drain Id25

220A Tc

Maximum Gate Source Voltage V

±20

Montaj Tipi

Chassis Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

ISOLATED

Channel Mode

Enhancement

Ds Breakdown Voltagemin

200V

Typical Rise Time Ns

38

Number Of Elements Per Chip

1

Terminal Kaplaması

Nickel (Ni)

Typical Gate Charge10v Nc

358

Seri

GigaMOS™

Kılıf / Paket

SOT-227-4, miniBLOC

Drainsource On Resistancemax

0.0075Ohm

Maximum Drain Source Voltage V

200

Transistor Element Material

SILICON

Minimum Operating Temperature C

-55

ECCN Kodu

EAR99