IXFN20N120P

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Category

Power MOSFET

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Package Length

38.23(Max)

Channel Type

N

Number Of Elements

1

Fall Time Typ

70 ns

Pcb Changed

4

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

193nC @ 10V

Automotive

No

Continuous Drain Current Id

20A

Rise Time

45ns

Terminal Sayısı

4

Maximum Gate Source Voltage V

±30

Current Continuous Drain Id25

20A Tc

Rds On Max Id Vgs

570m Ω @ 10A, 10V

Supplier Package

SOT-227B

Maximum Operating Temperature C

150

Power Dissipation

595W

Operating Mode

ENHANCEMENT MODE

Additional Feature

UL RECOGNIZED, AVALANCHE RATED

Seri

Polar™

Gate To Source Voltage Vgs

30V

Typical Gate Charge10v Nc

193

Terminal Kaplaması

Nickel (Ni)

Ürün Tipi

Discrete Semiconductor Modules

Vgs Gatesource Voltage

- 30 V, + 30 V

Tip

Polar Power MOSFET HiPerFET

Technology

Si

Number Of Elements Per Chip

1

Typical Rise Time Ns

45

Case Connection

ISOLATED

Channel Mode

Enhancement

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Chassis Mount

Qualification Status

Not Qualified

Maks. Çalışma Sıcaklığı

+ 150 C

Turn Off Delay Time

72 ns