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IXFN120N20

IXYS

IXFN120N20

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Turn Off Delay Time
110 ns
Transistor Element Material
SILICON
Kılıf / Paket
SOT-227-4, miniBLOC
Qualification Status
Not Qualified
ECCN Kodu
EAR99
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
Montaj Tipi
Chassis Mount
Gate To Source Voltage Vgs
20V
Seri
HiPerFET™
Terminal Kaplaması
Nickel (Ni)
Operating Mode
ENHANCEMENT MODE
Power Dissipation
600W
Additional Feature
AVALANCHE RATED
Akım Değeri
120A
Current Continuous Drain Id25
120A Tc
Rds On Max Id Vgs
17m Ω @ 500mA, 10V
Number Of Elements
1
Fall Time Typ
40 ns
Reach Svhc
No SVHC
Continuous Drain Current Id
120A
Nem Hassasiyeti (MSL)
Not Applicable
Gate Charge Qg Max Vgs
360nC @ 10V
Terminal Sayısı
4
Rise Time
55ns
Drive Voltage Max Rds On Min Rds On
10V
Kurşunsuz Kodu
yes
Fet Type
N-Channel
Direnç
17MOhm
Recovery Time
250 ns
Montaj
Chassis Mount
Yayın Yılı
2003
Dual Supply Voltage
200V
Pin Sayısı
4
Fabrika Tedarik Süresi
8 Weeks
Vgsth Max Id
4V @ 8mA
Threshold Voltage
4V
Parça Durumu
Obsolete
Pulsed Drain Currentmax Idm
480A
Pin Sayısı
3

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