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Technical team support
Specifications
- Maximum Gate Source Voltage V
- ±30
- Rds On Max Id Vgs
- 52m Ω @ 50A, 10V
- Current Continuous Drain Id25
- 70A Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 625W
- Maximum Operating Temperature C
- 150
- Supplier Package
- ISOPLUS 264
- Additional Feature
- AVALANCHE RATED, UL RECOGNIZED
- Kurşunsuz Kodu
- yes
- Category
- Power MOSFET
- Drive Voltage Max Rds On Min Rds On
- 10V
- Package Length
- 20.29(Max)
- Fet Type
- N-Channel
- Pcb Changed
- 3
- Number Of Elements
- 1
- Fall Time Typ
- 26 ns
- Eccn Us
- EAR99
- Reach Svhc
- No SVHC
- Channel Type
- N
- Terminal Sayısı
- 3
- Rise Time
- 29ns
- Continuous Drain Current Id
- 70A
- Package Height
- 26.42(Max)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 240nC @ 10V
- Automotive
- No
- ECCN Kodu
- EAR99
- Qualification Status
- Not Qualified
- Maximum Drain Source Voltage V
- 500
- Transistor Element Material
- SILICON
- Process Technology
- HiperFET
- Minimum Operating Temperature C
- -55
- Turn Off Delay Time
- 110 ns
- Kılıf / Paket
- ISOPLUS264™
- Drainsource On Resistancemax
- 0.052Ohm
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Typical Gate Charge10v Nc
- 240
- Gate To Source Voltage Vgs
- 30V
- Seri
- HiPerFET™, PolarHT™
- Number Of Elements Per Chip
- 1
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