IXFK94N50P2

Specifications

Maks. Çalışma Sıcaklığı

+ 150 C

Process Technology

HiperFET

Vgs Th Gatesource Threshold Voltage

3 V

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

500

Transistor Polarity

N-Channel

Min. Çalışma Sıcaklığı

-55°C

Kılıf / Paket

TO-264-3, TO-264AA

Typical Gate Charge10v Nc

228

Gate To Source Voltage Vgs

30V

Seri

HiPerFET™, PolarHV™

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Elements Per Chip

1

Technology

Si

Channel Mode

Enhancement

Typical Rise Time Ns

15

Configuration

Single Dual Drain

Montaj Tipi

Through Hole

Drain To Source Resistance

55mOhm

Maximum Gate Source Voltage V

±30

Current Continuous Drain Id25

94A Tc

Rds On Max Id Vgs

55mOhm @ 500mA, 10V

Id Continuous Drain Current

94 A

Vds Drainsource Breakdown Voltage

500 V

Maximum Operating Temperature C

150

Supplier Package

TO-264

Input Capacitance

13.7nF

Power Dissipation

1.3kW

Maks. Çalışma Sıcaklığı

150°C

Drive Voltage Max Rds On Min Rds On

10V

Category

Power MOSFET

Fet Type

N-Channel

Radyasyon Dayanımı

No

Package Length

19.96(Max)

Number Of Elements

1

Channel Type

N

Tedarikçi Cihaz Paketi

TO-264AA (IXFK)

Pcb Changed

3

Continuous Drain Current Id

94A

Package Height

26.16(Max)