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Specifications
- Current Continuous Drain Id25
- 64A Tc
- Rds On Max Id Vgs
- 96m Ω @ 500mA, 10V
- Akım Değeri
- 64A
- Maximum Gate Source Voltage V
- ±30
- Additional Feature
- AVALANCHE RATED
- Maximum Operating Temperature C
- 150
- Supplier Package
- TO-264AA
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 1.04kW
- Fet Type
- N-Channel
- Package Length
- 19.96(Max)
- Drive Voltage Max Rds On Min Rds On
- 10V
- Category
- Power MOSFET
- Kurşunsuz Kodu
- yes
- Package Height
- 26.16(Max)
- Continuous Drain Current Id
- 64A
- Automotive
- No
- Gate Charge Qg Max Vgs
- 200nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Rise Time
- 23ns
- Fall Time Typ
- 24 ns
- Number Of Elements
- 1
- Channel Type
- N
- Reach Svhc
- No SVHC
- Pcb Changed
- 3
- Qualification Status
- Not Qualified
- ECCN Kodu
- EAR99
- Kılıf / Paket
- TO-264-3, TO-264AA
- Drainsource On Resistancemax
- 0.096Ohm
- Process Technology
- HiperFET
- Minimum Operating Temperature C
- -55
- Turn Off Delay Time
- 79 ns
- Maximum Drain Source Voltage V
- 600
- Transistor Element Material
- SILICON
- Number Of Elements Per Chip
- 1
- Gate To Source Voltage Vgs
- 30V
- Typical Gate Charge10v Nc
- 200
- Seri
- HiPerFET™, PolarHT™
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
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