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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pcb Changed
- 3
- Reach Svhc
- No SVHC
- Channel Type
- N
- Fall Time Typ
- 27 ns
- Number Of Elements
- 1
- Eccn Us
- EAR99
- Rise Time
- 22ns
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 198nC @ 10V
- Automotive
- No
- Continuous Drain Current Id
- 44A
- Package Height
- 26.16(Max)
- Kurşunsuz Kodu
- yes
- Category
- Power MOSFET
- Drive Voltage Max Rds On Min Rds On
- 10V
- Package Length
- 19.96(Max)
- Fet Type
- N-Channel
- Direnç
- 190MOhm
- Radyasyon Dayanımı
- No
- Power Dissipation
- 1.04kW
- Operating Mode
- ENHANCEMENT MODE
- Supplier Package
- TO-264AA
- Maximum Operating Temperature C
- 150
- Additional Feature
- AVALANCHE RATED
- Maximum Gate Source Voltage V
- ±30
- Rds On Max Id Vgs
- 190m Ω @ 22A, 10V
- Current Continuous Drain Id25
- 44A Tc
- Typical Rise Time Ns
- 22
- Case Connection
- DRAIN
- Channel Mode
- Enhancement
- JESD-609 Kodu
- e1
- Montaj Tipi
- Through Hole
- Configuration
- Single
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Seri
- HiPerFET™, PolarHT™
- Typical Gate Charge10v Nc
- 198
- Gate To Source Voltage Vgs
- 30V
- Svhc
- Yes
- Number Of Elements Per Chip
- 1
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