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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 4m Ω @ 60A, 10V
- Current Continuous Drain Id25
- 360A Tc
- Operating Mode
- ENHANCEMENT MODE
- Number Of Drivers
- 1
- Output Voltage
- 150V
- Additional Feature
- AVALANCHE RATED
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fet Type
- N-Channel
- Number Of Elements
- 1
- Fall Time Typ
- 265 ns
- Terminal Sayısı
- 3
- Rise Time
- 170ns
- Continuous Drain Current Id
- 360A
- Gate Charge Qg Max Vgs
- 715nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 115 ns
- Kılıf / Paket
- TO-264-3, TO-264AA
- Drainsource On Resistancemax
- 0.004Ohm
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Seri
- GigaMOS™
- Case Connection
- DRAIN
- JESD-609 Kodu
- e1
- Montaj Tipi
- Through Hole
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Jesd30 Code
- R-PSFM-T3
- Power Dissipation Max
- 1670W Tc
- Terminal Pozisyonu
- SINGLE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ambalaj
- Tube
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 47500pF @ 25V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fabrika Tedarik Süresi
- 30 Weeks
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