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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgs Max
- ±30V
- Gate To Source Voltage Vgs
- 30V
- Pulsed Drain Currentmax Idm
- 75A
- Seri
- HiPerFET™, PolarP2™
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
- Element Configuration
- Single
- JESD-609 Kodu
- e1
- Case Connection
- DRAIN
- Qualification Status
- Not Qualified
- Drain To Source Voltage Vdss
- 1000V
- Pin Sayısı
- 3
- Fabrika Tedarik Süresi
- 30 Weeks
- Vgsth Max Id
- 6.5V @ 1mA
- Yayın Yılı
- 2008
- Montaj
- Through Hole
- Kılıf / Paket
- TO-264-3, TO-264AA
- Drainsource On Resistancemax
- 0.32Ohm
- Avalanche Energy Rating Eas
- 1500 mJ
- Turn Off Delay Time
- 76 ns
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Breakdown Voltage
- 1kV
- Kurşunsuz Kodu
- yes
- Input Capacitance Ciss Max Vds
- 14200pF @ 25V
- RoHS Durumu
- ROHS3 Compliant
- Continuous Drain Current Id
- 32A
- Gate Charge Qg Max Vgs
- 225nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Sayısı
- 3
- Ambalaj
- Tube
- Rise Time
- 55ns
- Kurşunsuz
- Lead Free
- Fall Time Typ
- 43 ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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