IXFK27N80Q

Specifications

Package Length

19.96(Max)

Fet Type

N-Channel

Category

Power MOSFET

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Rise Time

28ns

Terminal Sayısı

3

Automotive

No

Gate Charge Qg Max Vgs

170nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Height

26.16(Max)

Continuous Drain Current Id

27A

Pcb Changed

3

Channel Type

N

Number Of Elements

1

Genişlik

5.13mm

Fall Time Typ

13 ns

Rds On Max Id Vgs

320m Ω @ 500mA, 10V

Current Continuous Drain Id25

27A Tc

Maximum Gate Source Voltage V

±20

Additional Feature

AVALANCHE RATED

Power Dissipation

500W

Operating Mode

ENHANCEMENT MODE

Supplier Package

TO-264AA

Maximum Operating Temperature C

150

Number Of Elements Per Chip

1

Seri

HiPerFET™

Gate To Source Voltage Vgs

20V

Typical Gate Charge10v Nc

170

Montaj Tipi

Through Hole

Configuration

Single

Typical Rise Time Ns

28

Case Connection

DRAIN

Channel Mode

Enhancement

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Kılıf / Paket

TO-264-3, TO-264AA

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

800

Turn Off Delay Time

50 ns