IXFK210N30X3

Specifications

Channel Type

N

Eccn Us

EAR99

Pcb Changed

3

Gate Charge Qg Max Vgs

375nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

210A

Package Height

26.3(Max)

Drive Voltage Max Rds On Min Rds On

10V

Category

Power MOSFET

Fet Type

N-Channel

Package Length

20.3(Max)

Supplier Package

TO-264

Vds Drainsource Breakdown Voltage

300 V

Maximum Operating Temperature C

150

Power Dissipation

1.25kW

Maximum Gate Source Voltage V

±20

Current Continuous Drain Id25

210A Tc

Rds On Max Id Vgs

5.5m Ω @ 105A, 10V

Id Continuous Drain Current

210 A

Typical Rise Time Ns

40

Channel Mode

Enhancement

Configuration

Single

Montaj Tipi

Through Hole

Seri

HiPerFET™

Typical Gate Charge10v Nc

375

Vgs Gatesource Voltage

- 20 V, + 20 V

Technology

Si

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Maximum Drain Source Voltage V

300

Transistor Polarity

N-Channel

Kılıf / Paket

TO-264-3, TO-264AA

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Drain Source Resistance Mohm

5.5@10V

Input Capacitance Ciss Max Vds

24.2nF @ 25V

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tube

Çalışma Sıcaklığı

-55°C~150°C TJ

Mounting

Through Hole