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Technical team support
Specifications
- ECCN Kodu
- EAR99
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- Maximum Drain Source Voltage V
- 250
- Minimum Operating Temperature C
- -55
- Process Technology
- GigaMOS
- Drainsource On Resistancemax
- 0.0129Ohm
- Kılıf / Paket
- TO-264-3, TO-264AA
- Terminal Kaplaması
- TIN SILVER COPPER
- Seri
- GigaMOS™
- Typical Gate Charge10v Nc
- 345
- Svhc
- Yes
- Number Of Elements Per Chip
- 1
- Typical Rise Time Ns
- 33
- Ds Breakdown Voltagemin
- 250V
- Case Connection
- DRAIN
- Channel Mode
- Enhancement
- JESD-609 Kodu
- e1
- Montaj Tipi
- Through Hole
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Maximum Gate Source Voltage V
- ±20
- Rds On Max Id Vgs
- 12.9m Ω @ 60A, 10V
- Current Continuous Drain Id25
- 180A Tc
- Power Dissipation
- 1.39kW
- Operating Mode
- ENHANCEMENT MODE
- Supplier Package
- TO-264
- Maximum Operating Temperature C
- 150
- Additional Feature
- AVALANCHE RATED
- Category
- Power MOSFET
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Package Length
- 19.96(Max)
- Fet Type
- N-Channel
- Pcb Changed
- 3
- Channel Type
- N
- Number Of Elements
- 1
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 345nC @ 10V
- Automotive
- No
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