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Specifications
- Maximum Gate Source Voltage V
- ±20
- Package Type
- TO-264AA
- Current Continuous Drain Id25
- 180A Tc
- Rds On Max Id Vgs
- 11m Ω @ 90A, 10V
- Maximum Operating Temperature C
- 175
- Supplier Package
- TO-264AA
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 830W
- Additional Feature
- AVALANCHE RATED
- Polarity
- N
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Category
- Power MOSFET
- Radyasyon Dayanımı
- No
- Direnç
- 11MOhm
- Fet Type
- N-Channel
- Package Length
- 19.96(Max)
- Operating Temperature Classification
- Military
- Number Of Elements
- 1
- Eccn Us
- EAR99
- Fall Time Typ
- 36 ns
- Channel Type
- N
- Reach Svhc
- No SVHC
- Pcb Changed
- 3
- Continuous Drain Current Id
- 180A
- Package Height
- 26.16(Max)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 240nC @ 10V
- Automotive
- No
- Terminal Sayısı
- 3
- Rise Time
- 32ns
- ECCN Kodu
- EAR99
- Process Technology
- HiperFET
- Turn Off Delay Time
- 150 ns
- Minimum Operating Temperature C
- -55
- Maximum Drain Source Voltage V
- 150
- Transistor Element Material
- SILICON
- Rad Hardened
- No
- Kılıf / Paket
- TO-264-3, TO-264AA
- Gate To Source Voltage Vgs
- 20V
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