IXFK160N30T

Specifications

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.39kW

Maximum Operating Temperature C

150

Supplier Package

TO-264

Rds On Max Id Vgs

19m Ω @ 60A, 10V

Current Continuous Drain Id25

160A Tc

Maximum Gate Source Voltage V

±20

Terminal Sayısı

3

Continuous Drain Current Id

160A

Package Height

26.16(Max)

Automotive

No

Gate Charge Qg Max Vgs

335nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pcb Changed

3

Number Of Elements

1

Channel Type

N

Package Length

19.96(Max)

Fet Type

N-Channel

Category

Power MOSFET

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-264-3, TO-264AA

Drainsource On Resistancemax

0.019Ohm

Maximum Drain Source Voltage V

300

Transistor Element Material

SILICON

Process Technology

GigaMOS

Minimum Operating Temperature C

-55

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Channel Mode

Enhancement

Ds Breakdown Voltagemin

300V

Typical Rise Time Ns

38

JESD-609 Kodu

e1

Number Of Elements Per Chip

1

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Typical Gate Charge10v Nc

335