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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 120A Tc
- Rds On Max Id Vgs
- 24m Ω @ 60A, 10V
- Jesd30 Code
- R-PSFM-T3
- Operating Mode
- ENHANCEMENT MODE
- Terminal Pozisyonu
- SINGLE
- Power Dissipation Max
- 960W Tc
- Additional Feature
- AVALANCHE RATED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 1
- Continuous Drain Current Id
- 120A
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 20000pF @ 25V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 265nC @ 10V
- Terminal Sayısı
- 3
- Ambalaj
- Tube
- Qualification Status
- Not Qualified
- Drain To Source Voltage Vdss
- 300V
- Pin Sayısı
- 3
- Fabrika Tedarik Süresi
- 30 Weeks
- Vgsth Max Id
- 5V @ 4mA
- ECCN Kodu
- EAR99
- Avalanche Energy Rating Eas
- 2500 mJ
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2009
- Montaj
- Through Hole
- Kılıf / Paket
- TO-264-3, TO-264AA
- Drainsource On Resistancemax
- 0.024Ohm
- REACH Uyumluluk Kodu
- unknown
- Pulsed Drain Currentmax Idm
- 330A
- Seri
- GigaMOS™
- Terminal Kaplaması
- TIN SILVER COPPER
- Vgs Max
- ±20V
- JESD-609 Kodu
- e1
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