IXFK120N25P

Specifications

Package Width

5.13(Max)

Maximum Continuous Drain Current A

120

Power Dissipation Max

700W Tc

Typical Input Capacitance Vds Pf

8700@25V

Ppap

No

Jesd30 Code

R-PSFM-T3

Mounting

Through Hole

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

250V

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tube

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

8000pF @ 25V

Maximum Drain Source Resistance Mohm

24@10V

Vgsth Max Id

5V @ 4mA

Typical Gate Charge Vgs Nc

185@10V

Fabrika Tedarik Süresi

30 Weeks

Pin Sayısı

3

Maximum Power Dissipation Mw

700000

Yayın Yılı

2006

Montaj

Through Hole

Eu Rohs

Compliant with Exemption

Avalanche Energy Rating Eas

2500 mJ

Vgs Max

±20V

Typical Fall Time Ns

33

Typical Turnon Delay Time Ns

30

Typical Turnoff Delay Time Ns

130

Pulsed Drain Currentmax Idm

300A

Parça Durumu

Active

Hts

8541.21.00.95

Tab

Tab

Element Configuration

Single

Rds On Max Id Vgs

24m Ω @ 60A, 10V

Current Continuous Drain Id25

120A Tc

Maximum Gate Source Voltage V

±20

Additional Feature

AVALANCHE RATED

Power Dissipation

700W

Operating Mode

ENHANCEMENT MODE

Supplier Package

TO-264

Maximum Operating Temperature C

150