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IXFH96N20P

IXYS

IXFH96N20P

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Pcb Changed
3
Genişlik
5.3mm
Fall Time Typ
30 ns
Eccn Us
EAR99
Number Of Elements
1
Channel Type
N
Terminal Sayısı
3
Rise Time
30ns
Continuous Drain Current Id
96A
Package Height
21.46(Max)
Automotive
No
Gate Charge Qg Max Vgs
145nC @ 10V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Category
Power MOSFET
Kurşunsuz Kodu
yes
Polarity
N
Drive Voltage Max Rds On Min Rds On
10V
Package Length
16.26(Max)
Operating Temperature Classification
Military
Direnç
24MOhm
Fet Type
N-Channel
Operating Mode
ENHANCEMENT MODE
Power Dissipation
600W
Maximum Operating Temperature C
175
Supplier Package
TO-247
Additional Feature
AVALANCHE RATED
Package Type
TO-247
Maximum Gate Source Voltage V
±20
Rds On Max Id Vgs
24m Ω @ 500mA, 10V
Current Continuous Drain Id25
96A Tc
Case Connection
DRAIN
Channel Mode
Enhancement
Typical Rise Time Ns
30
JESD-609 Kodu
e1
Montaj Tipi
Through Hole
Configuration
Single
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Gate To Source Voltage Vgs
20V
Typical Gate Charge10v Nc
145
Seri
PolarHT™ HiPerFET™

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