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Specifications
- Rds On Max Id Vgs
- 24m Ω @ 500mA, 10V
- Current Continuous Drain Id25
- 96A Tc
- Maximum Gate Source Voltage V
- ±20
- Additional Feature
- AVALANCHE ENERGY RATED
- Power Dissipation
- 480W
- Operating Mode
- ENHANCEMENT MODE
- Supplier Package
- TO-247
- Maximum Operating Temperature C
- 175
- Package Length
- 16.26(Max)
- Radyasyon Dayanımı
- No
- Fet Type
- N-Channel
- Kurşunsuz Kodu
- yes
- Category
- Power MOSFET
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rise Time
- 33ns
- Terminal Sayısı
- 3
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Automotive
- No
- Package Height
- 21.46(Max)
- Continuous Drain Current Id
- 96A
- Pcb Changed
- 3
- Channel Type
- N
- Eccn Us
- EAR99
- Number Of Elements
- 1
- Genişlik
- 5.3mm
- Fall Time Typ
- 18 ns
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.024Ohm
- Kılıf / Paket
- TO-247-3
- Transistor Element Material
- SILICON
- Maximum Drain Source Voltage V
- 150
- Turn Off Delay Time
- 66 ns
- Minimum Operating Temperature C
- -55
- Svhc
- Yes
- Number Of Elements Per Chip
- 1
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Seri
- PolarHT™ HiPerFET™
- Gate To Source Voltage Vgs
- 20V
- Typical Gate Charge10v Nc
- 110
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