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RoHS
Compliant
Support
Technical team support
Specifications
- Channel Mode
- Enhancement
- Case Connection
- DRAIN
- Typical Rise Time Ns
- 10
- JESD-609 Kodu
- e1
- Montaj Tipi
- Through Hole
- Configuration
- Single Dual Drain
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Typical Gate Charge10v Nc
- 113
- Gate To Source Voltage Vgs
- 30V
- Seri
- HiPerFET™, PolarHV™
- Svhc
- Yes
- Number Of Elements Per Chip
- 1
- Maximum Drain Source Voltage V
- 500
- Transistor Element Material
- SILICON
- Process Technology
- HiperFET
- Minimum Operating Temperature C
- -55
- Kılıf / Paket
- TO-247-3
- Drainsource On Resistancemax
- 0.12Ohm
- Qualification Status
- Not Qualified
- Pcb Changed
- 3
- Number Of Elements
- 1
- Eccn Us
- EAR99
- Channel Type
- N
- Terminal Sayısı
- 3
- Continuous Drain Current Id
- 52A
- Package Height
- 21.46(Max)
- Automotive
- No
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 113nC @ 10V
- Kurşunsuz Kodu
- yes
- Category
- Power MOSFET
- Drive Voltage Max Rds On Min Rds On
- 10V
- Package Length
- 16.26(Max)
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 960W
- Maximum Operating Temperature C
- 150
- Supplier Package
- TO-247
- Additional Feature
- AVALANCHE RATED
- Maximum Gate Source Voltage V
- ±30
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