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Specifications
- Terminal Kaplaması
- TIN SILVER COPPER
- Seri
- HiPerFET™
- Gate To Source Voltage Vgs
- 20V
- Montaj Tipi
- Through Hole
- Case Connection
- DRAIN
- JESD-609 Kodu
- e1
- ECCN Kodu
- EAR99
- Kılıf / Paket
- TO-247-3
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 80 ns
- Direnç
- 60mOhm
- Radyasyon Dayanımı
- No
- Fet Type
- N-Channel
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rise Time
- 60ns
- Terminal Sayısı
- 3
- Gate Charge Qg Max Vgs
- 150nC @ 10V
- Nem Hassasiyeti (MSL)
- Not Applicable
- Continuous Drain Current Id
- 52A
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
- Fall Time Typ
- 25 ns
- Rds On Max Id Vgs
- 60m Ω @ 500mA, 10V
- Current Continuous Drain Id25
- 52A Tc
- Akım Değeri
- 52A
- Additional Feature
- AVALANCHE RATED
- Power Dissipation
- 360W
- Operating Mode
- ENHANCEMENT MODE
- Reverse Recovery Time
- 250 ns
- Vgs Max
- ±20V
- Pin Sayısı
- 3
- Pulsed Drain Currentmax Idm
- 208A
- Parça Durumu
- Not For New Designs
- Element Configuration
- Single
- Vgsth Max Id
- 4V @ 4mA
- Threshold Voltage
- 4V
- Fabrika Tedarik Süresi
- 8 Weeks
- Pin Sayısı
- 3
- Dual Supply Voltage
- 300V
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