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IXFH50N85X

IXYS

IXFH50N85X

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Maximum Power Dissipation Mw
890000
Fabrika Tedarik Süresi
19 Weeks
Typical Gate Charge Vgs Nc
152@10V
Vgsth Max Id
5.5V @ 4mA
Drain To Source Voltage Vdss
850V
Pin Sayısı
3
Eu Rohs
Compliant with Exemption
Montaj
Through Hole
Yayın Yılı
2016
REACH Uyumluluk Kodu
unknown
Montaj Stili
Through Hole
Typical Turnoff Delay Time Ns
69
Number Of Channels
1 Channel
Pd Power Dissipation
890 W
Vgs Max
±30V
Typical Turnon Delay Time Ns
27
Typical Fall Time Ns
14
Svhc Exceeds Threshold
Yes
Parça Durumu
Active
Tab
Tab
Hts
8541.29.00.95
Minimum Operating Temperature
- 55 C
Qg Gate Charge
152 nC
Package Width
5.3(Max)
Maximum Continuous Drain Current A
50
Ppap
No
Power Dissipation Max
890W Tc
Typical Input Capacitance Vds Pf
4480@25V
Çalışma Sıcaklığı
-55°C~150°C TJ
Rds On Drainsource Resistance
105 mOhms
Mounting
Through Hole
Maximum Drain Source Resistance Mohm
105@10V
Ambalaj
Tube
RoHS Durumu
ROHS3 Compliant
Input Capacitance Ciss Max Vds
4480pF @ 25V
Maks. Çalışma Sıcaklığı
+ 150 C
Lead Shape
Through Hole
Maximum Drain Source Voltage V
850
Vgs Th Gatesource Threshold Voltage
3.5 V
Minimum Operating Temperature C
-55

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