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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Kılıf / Paket
- TO-247-3
- Turn Off Delay Time
- 75 ns
- Transistor Element Material
- SILICON
- Gate To Source Voltage Vgs
- 30V
- Seri
- HiPerFET™, PolarP2™
- Montaj Tipi
- Through Hole
- Case Connection
- DRAIN
- Current Continuous Drain Id25
- 36A Tc
- Rds On Max Id Vgs
- 170m Ω @ 500mA, 10V
- Akım Değeri
- 36A
- Additional Feature
- AVALANCHE RATED
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 540W
- Radyasyon Dayanımı
- No
- Fet Type
- N-Channel
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Continuous Drain Current Id
- 36A
- Gate Charge Qg Max Vgs
- 93nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Rise Time
- 27ns
- Genişlik
- 5.3mm
- Number Of Elements
- 1
- Fall Time Typ
- 21 ns
- Pin Sayısı
- 3
- Fabrika Tedarik Süresi
- 5 Weeks
- Vgsth Max Id
- 5V @ 4mA
- Turn On Delay Time
- 25 ns
- Yayın Yılı
- 2011
- Montaj
- Through Hole
- Pin Sayısı
- 3
- Vgs Max
- ±30V
- Pulsed Drain Currentmax Idm
- 90A
- Uzunluk
- 16.26mm
- Parça Durumu
- Active
- Element Configuration
- Single
- Jedec95 Code
- TO-247AD
- Power Dissipation Max
- 540W Tc
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