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Specifications
- JESD-609 Kodu
- e1
- Case Connection
- DRAIN
- Montaj Tipi
- Through Hole
- Gate To Source Voltage Vgs
- 20V
- Seri
- HiPerFET™
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn Off Delay Time
- 110 ns
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-247-3
- ECCN Kodu
- EAR99
- Number Of Elements
- 1
- Fall Time Typ
- 26 ns
- Reach Svhc
- No SVHC
- Continuous Drain Current Id
- 32A
- Gate Charge Qg Max Vgs
- 300nC @ 10V
- Nem Hassasiyeti (MSL)
- Not Applicable
- Terminal Sayısı
- 3
- Rise Time
- 42ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Radyasyon Dayanımı
- No
- Direnç
- 150mOhm
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 360W
- Additional Feature
- AVALANCHE RATED
- Akım Değeri
- 32A
- Current Continuous Drain Id25
- 32A Tc
- Rds On Max Id Vgs
- 150m Ω @ 15A, 10V
- Element Configuration
- Single
- Parça Durumu
- Obsolete
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Recovery Time
- 250 ns
- Yayın Yılı
- 2000
- Montaj
- Through Hole
- Dual Supply Voltage
- 500V
- Pin Sayısı
- 3
- Threshold Voltage
- 4V
- Vgsth Max Id
- 4V @ 4mA
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