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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Package Length
- 16.26(Max)
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Category
- Power MOSFET
- Continuous Drain Current Id
- 320A
- Package Height
- 21.46(Max)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 430nC @ 10V
- Automotive
- No
- Terminal Sayısı
- 3
- Rise Time
- 46ns
- Fall Time Typ
- 177 ns
- Number Of Elements
- 1
- Eccn Us
- EAR99
- Channel Type
- N
- Pcb Changed
- 3
- Current Continuous Drain Id25
- 320A Tc
- Rds On Max Id Vgs
- 3.5m Ω @ 100A, 10V
- Maximum Gate Source Voltage V
- ±20
- Additional Feature
- AVALANCHE RATED
- Maximum Operating Temperature C
- 175
- Supplier Package
- TO-247
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 1kW
- Number Of Elements Per Chip
- 1
- Svhc
- Yes
- Gate To Source Voltage Vgs
- 20V
- Typical Gate Charge10v Nc
- 430
- Seri
- HiPerFET™, TrenchT2™
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Configuration
- Single
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e1
- Case Connection
- DRAIN
- Channel Mode
- Enhancement
- Typical Rise Time Ns
- 46
- Qualification Status
- Not Qualified
- ECCN Kodu
- EAR99
- Kılıf / Paket
- TO-247-3
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