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Technical team support
Specifications
- ECCN Kodu
- EAR99
- Kılıf / Paket
- TO-247-3
- Rad Hardened
- No
- Maximum Drain Source Voltage V
- 500
- Transistor Element Material
- SILICON
- Process Technology
- HiperFET
- Minimum Operating Temperature C
- -55
- Turn Off Delay Time
- 82 ns
- Svhc
- Yes
- Operating Temp Range
- -55C to 150C
- Number Of Elements Per Chip
- 1
- Tip
- Power MOSFET
- Typical Gate Charge10v Nc
- 70
- Gate To Source Voltage Vgs
- 30V
- Seri
- HiPerFET™, PolarHT™
- Montaj Tipi
- Through Hole
- Configuration
- Single
- Channel Mode
- Enhancement
- Case Connection
- DRAIN
- Typical Rise Time Ns
- 24
- Rds On Max Id Vgs
- 200m Ω @ 15A, 10V
- Current Continuous Drain Id25
- 30A Tc
- Akım Değeri
- 30A
- Package Type
- TO-247AD
- Maximum Gate Source Voltage V
- ±30
- Additional Feature
- AVALANCHE RATED
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 460W
- Maximum Operating Temperature C
- 150
- Supplier Package
- TO-247AD
- Package Length
- 16.26(Max)
- Operating Temperature Classification
- Military
- Radyasyon Dayanımı
- No
- Direnç
- 200MOhm
- Fet Type
- N-Channel
- Category
- Power MOSFET
- Kurşunsuz Kodu
- yes
- Polarity
- N
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
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