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Verified sourcing
RoHS
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Technical team support
Specifications
- Case Connection
- DRAIN
- Montaj Tipi
- Through Hole
- Seri
- HiPerFET™
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 51 ns
- Kılıf / Paket
- TO-247-3
- ECCN Kodu
- EAR99
- Qualification Status
- Not Qualified
- Reach Svhc
- No SVHC
- Fall Time Typ
- 12 ns
- Number Of Elements
- 1
- Rise Time
- 35ns
- Terminal Sayısı
- 3
- Gate Charge Qg Max Vgs
- 95nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 30A
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fet Type
- N-Channel
- Direnç
- 160mOhm
- Power Dissipation
- 300W
- Operating Mode
- ENHANCEMENT MODE
- Additional Feature
- AVALANCHE RATED
- Rds On Max Id Vgs
- 160m Ω @ 15A, 10V
- Current Continuous Drain Id25
- 30A Tc
- Element Configuration
- Single
- Parça Durumu
- Obsolete
- Pulsed Drain Currentmax Idm
- 120A
- Vgs Max
- ±20V
- Pin Sayısı
- 3
- Avalanche Energy Rating Eas
- 1.5 mJ
- REACH Uyumluluk Kodu
- unknown
- Montaj
- Through Hole
- Yayın Yılı
- 2000
- Vgsth Max Id
- 4V @ 4mA
- Threshold Voltage
- 4V
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ambalaj
- Tube
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