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Support
Technical team support
Specifications
- Category
- Power MOSFET
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Package Length
- 16.24(Max)
- Fet Type
- N-Channel
- Pcb Changed
- 3
- Channel Type
- N
- Reach Svhc
- No SVHC
- Eccn Us
- EAR99
- Fall Time Typ
- 38 ns
- Number Of Elements
- 1
- Rise Time
- 40ns
- Terminal Sayısı
- 3
- Automotive
- No
- Gate Charge Qg Max Vgs
- 130nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Package Height
- 21.45(Max)
- Continuous Drain Current Id
- 24A
- Maximum Gate Source Voltage V
- ±30
- Rds On Max Id Vgs
- 420m Ω @ 12A, 10V
- Current Continuous Drain Id25
- 24A Tc
- Power Dissipation
- 660W
- Operating Mode
- ENHANCEMENT MODE
- Supplier Package
- TO-247AD
- Maximum Operating Temperature C
- 150
- Additional Feature
- AVALANCHE RATED
- Standard Package Name
- TO-247
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Seri
- HiPerFET™, PolarP2™
- Typical Gate Charge10v Nc
- 130
- Gate To Source Voltage Vgs
- 30V
- Svhc
- Yes
- Number Of Elements Per Chip
- 1
- Typical Rise Time Ns
- 40
- Channel Mode
- Enhancement
- Case Connection
- DRAIN
- JESD-609 Kodu
- e1
- Montaj Tipi
- Through Hole
- Configuration
- Single
- Lead Shape
- Through Hole
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