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IXFH22N60P

IXYS

IXFH22N60P

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Yayın Yılı
2006
Montaj
Through Hole
Turn On Delay Time
20 ns
Vgsth Max Id
5.5V @ 4mA
Threshold Voltage
5.5V
Fabrika Tedarik Süresi
30 Weeks
Pin Sayısı
3
Parça Durumu
Active
Element Configuration
Single
Vgs Max
±30V
Pin Sayısı
3
Number Of Channels
1
Pulsed Drain Currentmax Idm
66A
Power Dissipation Max
400W Tc
Yükseklik
25.96mm
Voltage Rated Dc
600V
Jedec95 Code
TO-247AD
Ambalaj
Tube
Kurşunsuz
Lead Free
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Input Capacitance Ciss Max Vds
3600pF @ 25V
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Max Junction Temperature Tj
150°C
Transistor Application
SWITCHING
Drain To Source Breakdown Voltage
600V
Çalışma Sıcaklığı
-55°C~150°C TJ
Kılıf / Paket
TO-247-3
Transistor Element Material
SILICON
Turn Off Delay Time
60 ns
ECCN Kodu
EAR99
Qualification Status
Not Qualified
Montaj Tipi
Through Hole
Case Connection
DRAIN
JESD-609 Kodu
e1
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Seri
HiPerFET™, PolarHT™
Gate To Source Voltage Vgs
30V
Additional Feature
AVALANCHE RATED
Power Dissipation
400W

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