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C3 ChipZentronix
IXFH20N80Q

IXYS

IXFH20N80Q

Single MOSFETs Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Current Continuous Drain Id25
20A Tc
Rds On Max Id Vgs
420m Ω @ 10A, 10V
Akım Değeri
20A
Additional Feature
AVALANCHE RATED
Reverse Recovery Time
250 ns
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360W
Fet Type
N-Channel
Direnç
420mOhm
Drive Voltage Max Rds On Min Rds On
10V
Kurşunsuz Kodu
yes
Continuous Drain Current Id
20A
Nem Hassasiyeti (MSL)
Not Applicable
Gate Charge Qg Max Vgs
200nC @ 10V
Terminal Sayısı
3
Rise Time
27ns
Number Of Elements
1
Fall Time Typ
14 ns
Reach Svhc
No SVHC
Qualification Status
Not Qualified
ECCN Kodu
EAR99
Kılıf / Paket
TO-247-3
Turn Off Delay Time
74 ns
Transistor Element Material
SILICON
Gate To Source Voltage Vgs
20V
Seri
HiPerFET™
Montaj Tipi
Through Hole
Case Connection
DRAIN
Jedec95 Code
TO-247AD
Power Dissipation Max
360W Tc
Terminal
Through Hole
Voltage Rated Dc
800V
Çalışma Sıcaklığı
-55°C~150°C TJ
Nominal Vgs
4.5 V
Drain To Source Breakdown Voltage
800V
Input Capacitance Ciss Max Vds
5100pF @ 25V
RoHS Durumu
RoHS Compliant
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz
Lead Free
Weight
6g

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