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Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 350m Ω @ 10A, 10V
- Current Continuous Drain Id25
- 20A Tc
- Akım Değeri
- 20A
- Additional Feature
- AVALANCHE RATED
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 300W
- Reverse Recovery Time
- 250 ns
- Fet Type
- N-Channel
- Direnç
- 350MOhm
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Rise Time
- 43ns
- HTS Kodu
- 8541.29.00.95
- Continuous Drain Current Id
- 20A
- Nem Hassasiyeti (MSL)
- Not Applicable
- Gate Charge Qg Max Vgs
- 170nC @ 10V
- Number Of Elements
- 1
- Fall Time Typ
- 40 ns
- Reach Svhc
- No SVHC
- ECCN Kodu
- EAR99
- Qualification Status
- Not Qualified
- Kılıf / Paket
- TO-247-3
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 70 ns
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate To Source Voltage Vgs
- 20V
- Seri
- HiPerFET™
- Montaj Tipi
- Through Hole
- Case Connection
- DRAIN
- JESD-609 Kodu
- e1
- Power Dissipation Max
- 300W Tc
- Terminal
- Through Hole
- Voltage Rated Dc
- 600V
- Transistor Application
- SWITCHING
- Drain To Source Breakdown Voltage
- 600V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nominal Vgs
- 4.5 V
- Ambalaj
- Tube
- Weight
- 6g
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