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C3 ChipZentronix
IXFH20N100P

IXYS

IXFH20N100P

Single MOSFETs Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Typical Input Capacitance Vds Pf
7300@25V
Power Dissipation Max
660W Tc
Jesd30 Code
R-PSFM-T3
Ppap
No
Maximum Continuous Drain Current A
20
Qg Gate Charge
126 nC
Package Width
5.3(Max)
Jedec95 Code
TO-247AD
RoHS Durumu
ROHS3 Compliant
Input Capacitance Ciss Max Vds
7300pF @ 25V
Ambalaj
Tube
Kurşunsuz
Lead Free
Maximum Drain Source Resistance Mohm
570@10V
Transistor Application
SWITCHING
Rds On Drainsource Resistance
570 mOhms
Mounting
Through Hole
Çalışma Sıcaklığı
-55°C~150°C TJ
Drain To Source Breakdown Voltage
1kV
Montaj Stili
Through Hole
Montaj
Through Hole
Yayın Yılı
2008
Avalanche Energy Rating Eas
800 mJ
Eu Rohs
Compliant with Exemption
Drain To Source Voltage Vdss
1000V
Pin Sayısı
3
Fabrika Tedarik Süresi
30 Weeks
Typical Gate Charge Vgs Nc
126@10V
Vgsth Max Id
6.5V @ 1mA
Maximum Power Dissipation Mw
660000
Tab
Tab
Hts
8541.29.00.95
Minimum Operating Temperature
- 55 C
Svhc Exceeds Threshold
Yes
Parça Durumu
Active
Element Configuration
Single
Typical Turnon Delay Time Ns
40
Typical Fall Time Ns
45
Vgs Max
±30V
Pulsed Drain Currentmax Idm
50A
Pd Power Dissipation
660 W

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