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C3 ChipZentronix
IXFH16N80P

IXYS

IXFH16N80P

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Current Continuous Drain Id25
16A Tc
Rds On Max Id Vgs
600m Ω @ 500mA, 10V
Package Type
TO-247AD
Maximum Gate Source Voltage V
±30
Additional Feature
AVALANCHE RATED
Maximum Operating Temperature C
150
Supplier Package
TO-247AD
Operating Mode
ENHANCEMENT MODE
Power Dissipation
460W
Direnç
600MOhm
Fet Type
N-Channel
Radyasyon Dayanımı
No
Package Length
16.26(Max)
Operating Temperature Classification
Military
Polarity
N
Drive Voltage Max Rds On Min Rds On
10V
Kurşunsuz Kodu
yes
Category
Power MOSFET
Package Height
21.46(Max)
Continuous Drain Current Id
16A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gate Charge Qg Max Vgs
71nC @ 10V
Automotive
No
Terminal Sayısı
3
Rise Time
32ns
Number Of Elements
1
Eccn Us
EAR99
Fall Time Typ
29 ns
Channel Type
N
Reach Svhc
No SVHC
Pcb Changed
3
ECCN Kodu
EAR99
Rad Hardened
No
Kılıf / Paket
TO-247-3
Process Technology
PolarHV
Turn Off Delay Time
75 ns
Minimum Operating Temperature C
-55
Maximum Drain Source Voltage V
800
Transistor Element Material
SILICON
Number Of Elements Per Chip
1

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