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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 160A Tc
- Rds On Max Id Vgs
- 9m Ω @ 80A, 10V
- Terminal Pozisyonu
- SINGLE
- Power Dissipation Max
- 880W Tc
- Additional Feature
- AVALANCHE RATED
- Jesd30 Code
- R-PSFM-T3
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Input Capacitance Ciss Max Vds
- 15000pF @ 25V
- Continuous Drain Current Id
- 160A
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge Qg Max Vgs
- 253nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- Ambalaj
- Tube
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain To Source Voltage Vdss
- 150V
- Pin Sayısı
- 3
- Qualification Status
- Not Qualified
- Fabrika Tedarik Süresi
- 30 Weeks
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4.5V @ 1mA
- Kılıf / Paket
- TO-247-3
- Montaj
- Through Hole
- Yayın Yılı
- 2010
- REACH Uyumluluk Kodu
- unknown
- Drainsource On Resistancemax
- 0.009Ohm
- Avalanche Energy Rating Eas
- 1500 mJ
- Transistor Element Material
- SILICON
- Vgs Max
- ±20V
- Pulsed Drain Currentmax Idm
- 440A
- Seri
- GigaMOS™, HiPerFET™, TrenchT2™
- Terminal Kaplaması
- TIN SILVER COPPER
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