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Specifications
- Vgsth Max Id
- 6.5V @ 1mA
- Fabrika Tedarik Süresi
- 30 Weeks
- Drain To Source Voltage Vdss
- 1000V
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 44 ns
- Avalanche Energy Rating Eas
- 500 mJ
- Yayın Yılı
- 2008
- Kılıf / Paket
- TO-247-3
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Seri
- HiPerFET™, PolarP2™
- Pulsed Drain Currentmax Idm
- 40A
- Gate To Source Voltage Vgs
- 30V
- Vgs Max
- ±30V
- Case Connection
- DRAIN
- JESD-609 Kodu
- e1
- Element Configuration
- Single
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 760m Ω @ 500mA, 10V
- Current Continuous Drain Id25
- 15A Tc
- Power Dissipation
- 543W
- Operating Mode
- ENHANCEMENT MODE
- Jesd30 Code
- R-PSFM-T3
- Additional Feature
- AVALANCHE RATED
- Power Dissipation Max
- 543W Tc
- Kurşunsuz Kodu
- yes
- Drain To Source Breakdown Voltage
- 1kV
- Drive Voltage Max Rds On Min Rds On
- 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Direnç
- 760MOhm
- Fet Type
- N-Channel
- Number Of Elements
- 1
- Fall Time Typ
- 58 ns
- Kurşunsuz
- Lead Free
- Rise Time
- 44ns
- Ambalaj
- Tube
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