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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-247-3
- Montaj
- Through Hole
- Yayın Yılı
- 2006
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 85 ns
- Avalanche Energy Rating Eas
- 2500 mJ
- Fabrika Tedarik Süresi
- 30 Weeks
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 5V @ 4mA
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
- Case Connection
- DRAIN
- JESD-609 Kodu
- e1
- Element Configuration
- Single
- Vgs Max
- ±20V
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate To Source Voltage Vgs
- 20V
- Pulsed Drain Currentmax Idm
- 300A
- Seri
- HiPerFET™, PolarHT™
- Power Dissipation Max
- 600W Tc
- Additional Feature
- AVALANCHE RATED
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 600W
- Jesd30 Code
- R-PSFM-T3
- Rds On Max Id Vgs
- 11m Ω @ 70A, 10V
- Current Continuous Drain Id25
- 140A Tc
- Jedec95 Code
- TO-247AD
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- Rise Time
- 50ns
- Ambalaj
- Tube
- Input Capacitance Ciss Max Vds
- 4700pF @ 25V
- Continuous Drain Current Id
- 140A
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge Qg Max Vgs
- 155nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Fall Time Typ
- 26 ns
- Transistor Application
- SWITCHING
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