Volume pricing
- 1+ pcs$8.37
- 10+ pcs$7.90
- 100+ pcs$7.45
- 500+ pcs$7.03
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 12A Tc
- Rds On Max Id Vgs
- 900m Ω @ 6A, 10V
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 380W
- Additional Feature
- AVALANCHE RATED
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Fall Time Typ
- 68 ns
- Number Of Elements
- 1
- Reach Svhc
- No SVHC
- Continuous Drain Current Id
- 12A
- Gate Charge Qg Max Vgs
- 56nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Rise Time
- 34ns
- Qualification Status
- Not Qualified
- ECCN Kodu
- EAR99
- Turn Off Delay Time
- 50 ns
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-247-3
- Drainsource On Resistancemax
- 0.9Ohm
- Gate To Source Voltage Vgs
- 30V
- Seri
- HiPerFET™, PolarP2™
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Kodu
- e1
- Case Connection
- DRAIN
- Montaj Tipi
- Through Hole
- Power Dissipation Max
- 380W Tc
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nominal Vgs
- 3.5 V
- Drain To Source Breakdown Voltage
- 900V
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 3080pF @ 25V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Ambalaj
- Tube
- Pin Sayısı
- 3
- Fabrika Tedarik Süresi
- 30 Weeks
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