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C3 ChipZentronix
IXFH12N100F

IXYS

IXFH12N100F

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Current Continuous Drain Id25
12A Tc
Rds On Max Id Vgs
1.05 Ω @ 6A, 10V
Jedec95 Code
TO-247
Power Dissipation Max
300W Tc
Additional Feature
AVALANCHE RATED
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Radyasyon Dayanımı
No
Fet Type
N-Channel
Transistor Application
SWITCHING
Çalışma Sıcaklığı
-55°C~150°C TJ
Drive Voltage Max Rds On Min Rds On
10V
Drain To Source Breakdown Voltage
1kV
Kurşunsuz Kodu
yes
Input Capacitance Ciss Max Vds
2700pF @ 25V
Continuous Drain Current Id
12A
RoHS Durumu
ROHS3 Compliant
Gate Charge Qg Max Vgs
77nC @ 10V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Sayısı
3
Kurşunsuz
Lead Free
Rise Time
9.8ns
Ambalaj
Tube
Number Of Elements
1
Fall Time Typ
12 ns
Reach Svhc
No SVHC
Pin Sayısı
3
Drain To Source Voltage Vdss
1000V
Fabrika Tedarik Süresi
30 Weeks
Threshold Voltage
3V
ECCN Kodu
EAR99
Vgsth Max Id
5.5V @ 4mA
Yayın Yılı
2005
Kılıf / Paket
TO-3P-3 Full Pack
Montaj
Through Hole
Turn Off Delay Time
31 ns
Transistor Element Material
SILICON
Pin Sayısı
3
Vgs Max
±20V
Pulsed Drain Currentmax Idm
48A

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